• Beo /Beryllia/Beryllium Oxide Substrate Metallization
  • Beo /Beryllia/Beryllium Oxide Substrate Metallization

Beo /Beryllia/Beryllium Oxide Substrate Metallization

Application: Insulators, Electrical Winding Insulation, Electrical Base, Shell, Insulating Varnish, Switch Baseplate
Type: Insulation Film
Chemistry: High Thermal Conductivity
Material: Eryllium Oxide
Thermal Rating: 1800 Degree C
Maximum Voltage: <10KV
Samples:
US$ 0/Piece 1 Piece(Min.Order)
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Customization:
Manufacturer/Factory & Trading Company

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Basic Info.

Model NO.
RY-T037
Classification
Heat Resistance
Certification
UL, ISO9001, SGS
Color
White
Brand
Ry
Transport Package
PE Bag and Carton
Specification
customized
Origin
Hunan
HS Code
854710000
Production Capacity
10000 PCS Per Month

Product Description

BEO Ceramic substrate
1. Alumina ( Al2O3 substrate )
Al2O3 substrate is the most popular ceramic substrate, with excellent heat
resistance, high mechanical strength , abrasion resistance and small dielectric
loss.The surface of alumina substrate is quite smooth and low porosity.99.6%
alumina substrate is suitable for thin film device, 96% alumina substrate is suitable for thick film device application .
 
2. Aluminium Nitride ( AlN substrate )
Aluminium Nitride has higher thermal conductivity, compared to alumina substrate. It is about 7 to 8 times high. AlN substrate is an excellent electronic package material.
 
3. Zirconia ( ZrO2 substrate )
Compared to alumina substrate, ZrO2 substrate has higher mechanical strength and fracture toughness it's about three times higher for bending strength, two times for fracture toughness than alumina substrate. ZrO2( zirconia ) also provides good abrasion resistance. It features a thermal expansion rate close to metals.
 
Ceramic Substrates Properties
Materials Al2O3 AlN ZrO2
96% 99.60%
Color White White Gray White
Density (g/cm 3 ) 3.72 3.85 3.3 6.04
Thermal conductivity (W/m. K) 22.3 29.5 160 -190 2.4
Thermal Expansion (x10 -6 / o C) 8 8.2 4.6 10
Dielectric strength 1.40E+07 1.80E+07 1.40E+07  
Dielectric Constant (at 1MHZ) 9.5 9.8 8.7 29
Loss Tangent (x10 -4 at 1MHZ) 3 2 5 1.00E-03
Volume Resistivity (ohm-m) >10 14 >10 14 >10 14  
Flexural Strength (N/mm 2 ) 350 500 450  

Beo /Beryllia/Beryllium Oxide Substrate MetallizationBeo /Beryllia/Beryllium Oxide Substrate MetallizationBeo /Beryllia/Beryllium Oxide Substrate MetallizationBeo /Beryllia/Beryllium Oxide Substrate Metallization
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Beo /Beryllia/Beryllium Oxide Substrate MetallizationBeo /Beryllia/Beryllium Oxide Substrate Metallization

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