| Refractoriness (℃): | 1380 |
|---|---|
| Feature: | Long Time Materials |
| Type: | Refractory Material |
| Shape: | Plate |
| Material: | Silicon Carbide (SiC) |
| Color: | Black with Grey |
| Customization: |
|---|
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Audited Supplier 1.Introduction of Silicon Carbide:
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with a chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics which are widely used in applications requiring high endurance, such as car brakes and ceramic plates in bulletproof vests. Electronic applications of silicon carbide as light emitting diode and detector in early radios have been demonstrated around 1907, and nowadays SiC is widely used in high-temperature semiconductor electronics. Large single crystals of silicon carbide can be grown by the Lely method; they can be cut into gems known as "synthetic moissanite". Silicon carbide with high surface area can be produced from SiO2 contained in plant material.
2.Features:
1) Heat shock stablity
2) chemical corrosion-resistant
3) High temper-endure(up to 1650°
4) Wearing/corrosion/oxidation resistant
5) Highly performance of mechanical strength
6) Cleaning or etching the hardest sub-surfaces
7) Used for grinding, lapping, and wire saw cutting as well as abrasive blasting
|
Density |
2.8 g/cm3 |
|
Porosity |
≤16% |
|
Phase composition |
β-Si3N4, Oxide |
|
SIC |
72% |
|
Si3N4 |
21% |
|
compressive strength |
140MPa |
|
flexure strength |
35MPa |
|
Thermal conductivity |
16 w/m*k |
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Audited Supplier 
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