| Customization: | Available |
|---|---|
| Material: | Silicon Carbide (SiC) |
| Refractoriness (℃): | 1580< Refractoriness< 1770 |
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| Item | Unit | Data |
| SiC Content | % | ≥98.5 |
| Working Temperature | °C | 1380 |
| Density | g/cm3 | ≥3.1 |
| Porosity | % | <0.1 |
| Bending Strength | MPA | 250(20°C) |
| 280(1200°C ) | ||
| Elastic Modulus | GPA | 330(20°C) |
| 300(1200°C ) | ||
| Thermal Conductivity | W/ M·K | 45(1200°C ) |
| Coefficient of Thermal Expansion | K-1×10-6 | 4.5 |
| Moh's Hardness | 13 | |
| Acid-base Property | Excellent |
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