Customization: | Available |
---|---|
Material: | Silicon Carbide (SiC) |
Refractoriness (℃): | 1580< Refractoriness< 1770 |
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Item | Unit | Data |
SiC Content | % | ≥98.5 |
Working Temperature | °C | 1380 |
Density | g/cm3 | ≥3.1 |
Porosity | % | <0.1 |
Bending Strength | MPA | 250(20°C) |
280(1200°C ) | ||
Elastic Modulus | GPA | 330(20°C) |
300(1200°C ) | ||
Thermal Conductivity | W/ M·K | 45(1200°C ) |
Coefficient of Thermal Expansion | K-1×10-6 | 4.5 |
Moh's Hardness | 13 | |
Acid-base Property | Excellent |