Good Thermal Shock Risistance High Purity Pyrolytic Boron Nitride of Vgf Crucible

• Customization: Available
• Application: Insulators
• Color: White
• Model NO.: RY007
• Material: Pyrolytic Boron Nitride
• Maximum Voltage: <10KV
• Classification: Organic Insulating Material
• Certification: ISO9001
• Type: Insulation Crucible
• Chemistry: Ceramic
• Brand: Ry
• Transport Package: Standard Exporter Packing
• Specification: According to custom′s requests
• Trademark: RY
• Origin: China
• Production Capacity: 500000

Product Description

Good Thermal Shock Risistance High Purity Pyrolytic Boron Nitride of VGF Crucible
Characteristic
1.Product color is between ivory white and orange-brown,nontoxic,imporosity,east processing.
2.The purity is up to 99.99%, surface densification,good has barrier properties.
3.The strength increases as temperature rises and peaked at 2200ºC, heater-resistance.
4.Acid,alkali,salt and organic reagent resistant.Meanwhile,it does not react with the
 majority of molten-metal and semiconductor material.
5.Excellent thermal shock resistance,excellent thermal conductivity,low thermal expansion coefficient.
6.High resistance,high dielectric strength,low dielectric constance,low dissipation factor,
  excellent microwave and infrared ray ability.
7.It has obvious anisotropy in the mechanics, heat and electricity.
 
Application
1.The crucible and substrate of semi-conductor single crystal and III-V compound synthesis
2.LEC crucible for the synthesis of GaAs,InP,GaP
3.MBE crucible for Molecular Beam Epitaxial.
4.VGF crucible
5.Other customizable PBN products
 
Product parameter

Property		Unit	Value
Lattice constant		μ m	a:2.504×10-10     c:6.692×10-10
Apparent density		g/cm3	2.0-2.19
Microhardness (Knoop) (ab plane)		N/mm2	691.88
Volume resistivity		Ω·cm	3.11×1011
Tensile strength (|| "C")		N/mm2	153.86
Bending strength	(|| "C")	N/mm2	243.63
	(⊥"C")	N/mm2	197.76
Modulus of elasticity		N/mm2	235690
Thermal conductivity		W/m·k	"a"direction   "c"direction
	(200°C)	W/m·k	60           2.60
	(900°C)	W/m·k	43.70       2.80
Dielectric strength (room temperature)		KV/mm	56